Distribution of damage produced by ion implantation of silicon at room temperature
- B.L. Crowder
- R.S. Title
- 2006
- Radiation Effects
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37 results for Billy L. Crowder
Model for the formation of amorphous Si by ion bombardment
- F.F. Morehead
- B.L. Crowder
- 2006
- Radiation Effects
Radiochemical determination of damage profiles in silicon
- B.J. Masters
- J.M. Fairfield
- et al.
- 2006
- Radiation Effects
Efficient injection electroluminescence in znte by avalanche breakdown
- B.L. Crowder
- F.F. Morehead
- et al.
- 2004
- Applied Physics Letters
Effect of O+ and Ne+ implantation on the surface characteristics of thermally oxidized Si
- N.J. Chou
- B.L. Crowder
- 2003
- Journal of Applied Physics
Formation of amorphous silicon by ion bombardment as a function of ion, temperature, and dose
- F.F. Morehead
- B.L. Crowder
- et al.
- 2003
- Journal of Applied Physics
X-ray topographic determination of the absence of lateral strains in ion-implanted silicon
- K.N. Tu
- P. Chaudhari
- et al.
- 2003
- Journal of Applied Physics
Defining the "random" spectrum as used in the channeling technique of nuclear backscattering
- J.F. Ziegler
- B.L. Crowder
- 2003
- Applied Physics Letters
Elastic and anelastic behavior of ion-implanted silicon
- S.I. Tan
- B.S. Berry
- et al.
- 2003
- Applied Physics Letters
ESR and optical absorption studies of ion-implanted silicon
- B.L. Crowder
- R.S. Title
- et al.
- 2003
- Applied Physics Letters