In1-xGaxAs-GaSb1-yAsy heterojunctions by molecular beam epitaxy
- H. Sakaki
- L.L. Chang
- et al.
- 2008
- Applied Physics Letters
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87 results for R. Ludeke
Observation of semiconductor-semimetal transition in InAs-GaSb superlattices
- L.L. Chang
- N. Kawai
- et al.
- 2008
- Applied Physics Letters
Ion backscattering and channeling study of InAs-GaSb superlattices
- F.W. Saris
- W.K. Chu
- et al.
- 2008
- Applied Physics Letters
Potential imaging of Si/HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole
- R. Ludeke
- V. Narayanan
- et al.
- 2005
- Applied Physics Letters
Electrostatic field and partial fermi level pinning at the pentacene-SiO 2 interface
- Liwei Chen
- R. Ludeke
- et al.
- 2005
- Journal of Physical Chemistry B
Structural and surface potential characterization of annealed HfO 2 and (HfO 2) x(SiO 2) 1-x films
- R. Ludeke
- E. Gusev
- 2004
- Journal of Applied Physics
Tunable GaAs laser in an external dispersive cavity
- R. Ludeke
- E.P. Harris
- 2003
- Applied Physics Letters
Molecular beam epitaxy of alternating metal-semiconductor films
- R. Ludeke
- L.L. Chang
- et al.
- 2003
- Applied Physics Letters
Interpretation of scanning high-energy electron diffraction measurements with application to GaAs surfaces
- D.B. Dove
- R. Ludeke
- et al.
- 2003
- Journal of Applied Physics
Ga1-x Alx As superlattices profiled by auger electron spectroscopy
- R. Ludeke
- L. Esaki
- et al.
- 2003
- Applied Physics Letters