Investigation of existing defects and defect generation in device-grade SiO2 by ballistic electron emission spectroscopy
- H.J. Wen
- R. Ludeke
- 1997
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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87 results for R. Ludeke
Gate oxide characterization with ballistic electron emission microscopy
- R. Ludeke
- H.J. Wen
- 1997
- Microelectronic Engineering
Image force effects and the dielectric response of SiO2 in electron transport across metal-oxide-semiconductor structures
- H.J. Wen
- R. Ludeke
- et al.
- 1997
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Stressing and high field transport studies on device-grade SiO2 by ballistic electron emission spectroscopy
- R. Ludeke
- H.J. Wen
- et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Hot electron transport through metal-oxide-semiconductor structure studied by ballistic electron emission spectroscopy
- R. Ludeke
- A. Bauer
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
InAs(110)-p(1×1)-Sb(1 ML): Electronic structure and surface bonding
- A.B. McLean
- D.M. Swanston
- et al.
- 1995
- Physical Review B
Hot electron transport in SiO2 probed with a scanning tunnel microscope
- R. Ludeke
- A. Bauer
- et al.
- 1995
- Applied Physics Letters
Hot electron transport across metal-semiconductor interfaces probed by ballistic electron emission spectroscopy
- R. Ludeke
- A. Bauer
- 1994
- CMD 1994
Surface localized states on InAs(110)
- D.M. Swanston
- A.B. McLean
- et al.
- 1994
- Surface Science
Hot electron transport across metal-semiconductor interfaces probed by ballistic electron emission spectroscopy
- R. Ludeke
- A. Bauer
- 1994
- Physica Scripta