Impact of trap-assisted tunneling and channel quantization on InAs/Si hetero Tunnel FETs
- Saurabh Sant
- Andreas Schenk
- et al.
- 2016
- DRC 2016
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112 results for Kirsten E. Moselund
III-V-based hetero tunnel FETs: A simulation study with focus on non-ideality effects
- Andreas Schenk
- Saurabh Sant
- et al.
- 2016
- EUROSOI-ULIS 2016
III-V device integration on Si using template-assisted selective epitaxy
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- DRC 2015
Comparative simulation study of InAs/Si and All-III-V hetero tunnel FETs
- Andreas Schenk
- Saurabh Sant
- et al.
- 2015
- ECS Meeting 2015 Chicago
Fabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- EUROSOI-ULIS 2015
III-V semiconductor nanowires for future devices
- Heinz Schmid
- Mattias Borg
- et al.
- 2014
- DATE 2014
Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors
- H. Schmid
- K. Moselund
- et al.
- 2011
- DRC 2011
C-V measurements of single vertical nanowire capacitors
- Philipp Mensch
- K. Moselund
- et al.
- 2011
- DRC 2011
VLS-grown silicon nanowires - Dopant deactivation and tunnel FETs
- Mikael T. Björk
- K. Moselund
- et al.
- 2010
- SNW 2010
VLS-grown silicon nanowire tunnel FET
- K. Moselund
- H. Ghoneim
- et al.
- 2009
- DRC 2009