Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si
- J.A. Van Vechten
- 1986
- Physical Review B
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Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors
- J.A. Van Vechten
- J.F. Wager
- 1985
- Journal of Applied Physics
Asymmetry of anion and cation vacancy migration enthalpies in III-V compound semiconductors: Role of the kinetic energy
- J.A. Van Vechten
- J.F. Wager
- 1985
- Physical Review B
Atomic model for the M center in InP
- J.F. Wager
- J.A. Van Vechten
- 1985
- Physical Review B
Temperature dependence of transverse acoustic phonons in semiconductors
- J.A. Van Vechten
- 1985
- Physical Review B
Kinetic segregation of AlAs-GaAs during 〈110〉 MBE
- J.A. Van Vechten
- 1985
- Journal of Crystal Growth
EXTENDED AMORPHOUS VACANCIES. AN ALTERNATIVE TO THE SELF-INTERSTITIAL IN Si.
- J.A. Van Vechten
- 1984
- ICDS 1984
LASER-SOLID INTERACTIONS: LOCALIZATION OF MOMENTUM AND OF ENERGY.
- J.A. Van Vechten
- 1983
- MRS Proceedings 1983
BOSE CONDENSATION AND THE ATHERMAL NATURE OF PULSED LASER ANNEALING.
- J.A. Van Vechten
- 1983
- Interactions Laser-Solides 1983
Origin of CW laser generated high efficiency AlGaAs microstructures
- J.A. Van Vechten
- 1983
- Physica B+C