Modeling of luminescence phase delay for nondestructive characterization of Si wafers
- D. Guidotti
- J.S. Batchelder
- et al.
- 1989
- Journal of Applied Physics
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44 results for J.A. Van Vechten
First-overtone response in modulated photoluminescence emission in silicon at room temperature
- D. Guidotti
- J.S. Batchelder
- et al.
- 1988
- Physical Review B
Kink site saturation mechanism for whisker growth under sputtering conditions
- J.A. Van Vechten
- W. Solberg
- et al.
- 1987
- Journal of Crystal Growth
Nondestructive depth profiling of carrier lifetimes in full silicon wafers
- D. Guidotti
- J.S. Batchelder
- et al.
- 1986
- Applied Physics Letters
Comment on "Green's-function calculation of the lattice response near the vacancy in Si"
- J.A. Van Vechten
- 1986
- Physical Review B
Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si
- J.A. Van Vechten
- 1986
- Physical Review B
Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors
- J.A. Van Vechten
- J.F. Wager
- 1985
- Journal of Applied Physics
Asymmetry of anion and cation vacancy migration enthalpies in III-V compound semiconductors: Role of the kinetic energy
- J.A. Van Vechten
- J.F. Wager
- 1985
- Physical Review B
Atomic model for the M center in InP
- J.F. Wager
- J.A. Van Vechten
- 1985
- Physical Review B
Temperature dependence of transverse acoustic phonons in semiconductors
- J.A. Van Vechten
- 1985
- Physical Review B