Light-activated storage device (LASD)
- D.J. DiMaria
- R.F. DeKeersmaecker
- et al.
- 2008
- Journal of Applied Physics
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119 results for D.J. DiMaria
Electron trapping in SiO2 at 295 and 77 °K
- D.R. Young
- E.A. Irene
- et al.
- 2008
- Journal of Applied Physics
Graded or stepped energy band-gap-insulator MIS structures (GI-MIS or SI-MIS)
- D.J. DiMaria
- 2008
- Journal of Applied Physics
Exciton or hydrogen diffusion in SiO2?
- Z.A. Weinberg
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
Radiation damage in silicon dioxide films exposed to reactive ion etching
- D.J. DiMaria
- L.M. Ephrath
- et al.
- 2008
- Journal of Applied Physics
Observation of amorphous silicon regions in silicon-rich silicon dioxide films
- A. Hartstein
- J.C. Tsang
- et al.
- 2008
- Applied Physics Letters
Dual electron injector structure
- D.J. Dimaria
- D.W. Dong
- 2008
- Applied Physics Letters
High current injection into SiO2 from Si rich SiO2 films and experimental applications
- D.J. DiMaria
- D.W. Dong
- 2008
- Journal of Applied Physics
Electron trapping and detrapping characteristics of arsenic-implanted SiO2 layers
- R.F. DeKeersmaecker
- D.J. Dimaria
- 2008
- Journal of Applied Physics
Hole trapping in the bulk of SiO2 layers at room temperature
- R.F. DeKeersmaecker
- D.J. Dimaria
- 2008
- Journal of Applied Physics