Defect generation in field-effect transistors under channel-hot-electron stress
- D.J. DiMaria
- 2000
- Journal of Applied Physics
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119 results for D.J. DiMaria
Breakdown measurements of ultra-thin SiO2 at low voltage
- J.H. Stathis
- A. Vayshenker
- et al.
- 2000
- VLSI Technology 2000
Electron energy dependence of metal-oxide-semiconductor degradation
- D.J. DiMaria
- 1999
- Applied Physics Letters
Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers
- D.J. DiMaria
- 1999
- Journal of Applied Physics
Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
- D.J. DiMaria
- J.H. Stathis
- 1999
- Applied Physics Letters
Oxide scaling limit for future logic and memory technology
- J.H. Stathis
- D.J. DiMaria
- 1999
- Microelectronic Engineering
Currents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs
- S. Tiwari
- J.J. Welser
- et al.
- 1998
- DRC 1998
Reliability projection for ultra-thin oxides at low voltage
- J.H. Stathis
- D.J. DiMaria
- 1998
- IEDM 1998
Ultimate limit for defect generation in ultra-thin silicon dioxide
- D.J. DiMaria
- J.H. Stathis
- 1997
- Applied Physics Letters
Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- D.J. DiMaria
- J.H. Stathis
- 1997
- Applied Physics Letters