Impact of HF-based cleaning solutions on via resistance for sub-10 nm BEOL structures
- B. Peethala
- F. Mont
- et al.
- 2016
- Microelectronic Engineering
Publications
17 results for S. Siddiqui
BEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
Experimental study of nanoscale Co damascene BEOL interconnect structures
- James Kelly
- James H.-C. Chen
- et al.
- 2016
- IITC/AMC 2016
Tungsten and cobalt metallization: A material study for MOL local interconnects
- Vimal Kamineni
- Mark Raymond
- et al.
- 2016
- IITC/AMC 2016
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
- T. Dalton
- N. Fuller
- et al.
- 2004
- IITC 2004