Centroid shift of γ rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures
- T.C. Leung
- Y. Kong
- et al.
- 1991
- Applied Physics Letters
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32 results for Z.A. Weinberg
SiO2/Si interface properties using positrons
- P. Asoka-Kumar
- K.G. Lynn
- et al.
- 1991
- Physical Review B
Charge trapping and retention in ultra-thin oxide-nitride-oxide structures
- P. Olivo
- Z.A. Weinberg
- et al.
- 1991
- Solid State Electronics
Ultrathin oxide-nitride-oxide films
- Z.A. Weinberg
- K. Stein
- et al.
- 1990
- Applied Physics Letters
The relation between positive charge and breakdown in metal-oxide-silicon structures
- Z.A. Weinberg
- T.N. Nguyen
- 1987
- Journal of Applied Physics
SiO2-induced substrate current and its relation to positive charge in field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
Investigation of the SiO2-induced substrate current in silicon field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- 1985
- Journal of Applied Physics
The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface
- M.V. Fischetti
- Z.A. Weinberg
- et al.
- 1985
- Journal of Applied Physics
Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters
Dislocations and twins formed in zone melted recrystallized Si on SiO 2
- Y. Komem
- Z.A. Weinberg
- 1984
- Journal of Applied Physics