STT-MRAM with double magnetic tunnel junctions
- Guohan Hu
- J.H. Lee
- et al.
- 2015
- IEDM 2015
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123 results for Yu Zhu
A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer
- Sangbum Kim
- N. Sosa
- et al.
- 2013
- IEDM 2013
Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
- H.Y. Cheng
- Matthew Brightsky
- et al.
- 2013
- IEDM 2013
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs
- H. Miki
- N. Tega
- et al.
- 2012
- IEDM 2012
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials
- Jing Li
- Binquan Luan
- et al.
- 2011
- IEDM 2011
A low power phase change memory using thermally confined TaN/TiN bottom electrode
- J.Y. Wu
- Matthew Breitwisch
- et al.
- 2011
- IEDM 2011
Racetrack memory cell array with integrated magnetic tunnel junction readout
- A. Annunziata
- M.C. Gaidis
- et al.
- 2011
- IEDM 2011