Systematic characterization of pseudomorphic (110) intrinsic SiGe epitaxial films for hybrid orientation technology with embedded SiGe source/drainQiqing OuyangAnita Madanet al.2006MRS Spring Meeting 2006
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devicesK. IdaS. Nguyenet al.2005AMC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodesT. NogamiS. Laneet al.2005Optics East 2005
Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substratesQiqing OuyangMin Yanget al.2005VLSI Technology 2005