Junction delineation by anodic oxidation in InSb (As, P)
- L.L. Chang
- 1967
- Solid-State Electronics
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Interaction of two avalanching layers in GaAs
- K. Weiser
- 1967
- Solid-State Electronics
A Parallel-Plate Waveguide Approach to Micro-miniaturized, Planar Transmission Lines for Integrated Circuits
- Henry Guckel
- 1967
- IEEE T-MTT
Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide
- J.A. Aboaf
- 1967
- JES
Avalanching in GaAs p-π-p structures
- K. Weiser
- M.E. Drougard
- et al.
- 1967
- Journal of Physics and Chemistry of Solids
Measurement of the Relaxation Time of the Eastman 9740 Bleachable Dye
- J.W. Shelton
- J.A. Armstrong
- 1967
- IEEE JQE
Dielectric and anelastic relaxation of crystals containing point defects. II
- A.S. Nowick
- 1967
- Advances in Physics
Orientation dependence of surface charge on anodized InSb
- L.L. Chang
- 1967
- Solid-State Electronics
Microscopic free energy and order parameters of antiferroelectrics
- P.B. Miller
- P.C. Kwok
- 1967
- Solid State Communications
Phase Diagram of the Pseudo-Binary System Ag2Te-In2Te3 and Semiconducting Properties of AgIn9Te14
- Ping-Wang Chiang
- D.F. O'Kane
- et al.
- 1967
- JES