Non-resistance-based cell-state metric for phase-change memory
- 2011
- Journal of Applied Physics
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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2353 results at Journal of Applied Physics
Cr metal thin film memory
- Augustin J. Hong
- Jiyoung Kim
- et al.
- 2011
- Journal of Applied Physics
Voltage polarity effects in Ge2Sb2Te 5-based phase change memory devices
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2011
- Journal of Applied Physics
Topographic patterning by voltage-assisted tribocharging of a polymer
- A. Kleiner
- O. Marti
- et al.
- 2011
- Journal of Applied Physics
Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth
- Y.E. Yaish
- A. Katsman
- et al.
- 2011
- Journal of Applied Physics
Nanoscale silicon-on-insulator deformation induced by stressed liner structures
- Conal E. Murray
- Andrew Ying
- et al.
- 2011
- Journal of Applied Physics
Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces
- A.F. Basile
- John Rozen
- et al.
- 2011
- Journal of Applied Physics
High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer
- M. Tofizur Rahman
- Andrew Lyle
- et al.
- 2011
- Journal of Applied Physics
X-ray photoelectron spectroscopy study on Fe and Co catalysts during the first stages of ethanol chemical vapor deposition for single-walled carbon nanotube growth
- Satoshi Oida
- Fenton R. McFeely
- et al.
- 2011
- Journal of Applied Physics
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics