Three-Dimensional “Atomistic” Simulation of Discrete Random Dopant Distribution Effects in Sub-0.1μm MOSFET'sHon-Sum WongYuan Taur1993IEDM 1993
SOI for a 1-Volt CMOS Technology and Application to a 512kb SRAM with 3.5 ns Access TimeG. ShahidiT.H. Ninget al.1993IEDM 1993
High performance dielectrics and processes for ULSI interconnection technologiesJ. ParaszczakD. Edelsteinet al.1993IEDM 1993