Evaluation methodology for random telegraph noise effects in SRAM arrays
- M. Yamaoka
- Hiroshi Miki
- et al.
- 2011
- IEDM 2011
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24092 results for Exploratory Science
Graphene technology with inverted-T gate and RF passives on 200 mm platform
- Shu-Jen Han
- Alberto Valdes-Garcia
- et al.
- 2011
- IEDM 2011
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
How do different surface modification strategies affect the properties of MnO nanoparticles for biomedical applications? Comparison of PEGylated and SiO2-coated MnO nanoparticles
- Thomas D. Schladt
- Kerstin Koll
- et al.
- 2011
- MRS Spring Meeting 2011
Chip-level power-performance optimization through thermally-driven across-chip variation (ACV) reduction
- X. Yu
- Oleg Gluschenkov
- et al.
- 2011
- IEDM 2011
Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials
- Jing Li
- Binquan Luan
- et al.
- 2011
- IEDM 2011
Racetrack memory: A high-performance, low-cost, non-volatile memory based on magnetic domain walls
- Luc Thomas
- See-Hun Yang
- et al.
- 2011
- IEDM 2011
A low power phase change memory using thermally confined TaN/TiN bottom electrode
- J.Y. Wu
- Matthew Breitwisch
- et al.
- 2011
- IEDM 2011
High device yield carbon nanotube NFETs for high-performance logic applications
- Davood Shahrjerdi
- Aaron D. Franklin
- et al.
- 2011
- IEDM 2011
Drift-resilient cell-state metric for multilevel phase-change memory
- 2011
- IEDM 2011