Band gap of the Ge(111)2×1 and Si(111)2×1 surfaces by scanning tunneling spectroscopyR.M. Feenstra1991Physical Review B
Copper passivation of boron in silicon and boron reactivation kineticsM.O. AboelfotohB.G. Svensson1991Physical Review B
Energy shifts and broadening of atomic electron levels near impurity-covered metal surfacesP. NordlanderN.D. Lang1991Physical Review B
Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)F.K. LeGouesM. Horn-Von Hoegenet al.1991Physical Review B
Admittance measurements of acceptor freezeout and impurity conduction in Be-doped GaAsT.W. Hickmott1991Physical Review B
Transport entropy in YBa2Cu3O7: A comparison between epitaxial and polycrystalline thin filmsF. KoberH.-C. Riet al.1991Physical Review B
Hot-electron dynamics in SiO2 studied by soft-x-ray-induced core-level photoemissionE. CartierF.R. McFeely1991Physical Review B
Amorphous silicon studied by ab initio molecular dynamics: Preparation, structure, and propertiesI. ÅtichR. Caret al.1991Physical Review B
Weak localization and conductance fluctuations in complex mesoscopic geometriesV. ChandrasekharP. Santhanamet al.1991Physical Review B