Atomic-scale view of AlGaAs/GaAs multilayers with cross-sectional scanning tunneling microscopy
- M. Johnson
- U. Maier
- et al.
- 1993
- Journal of Crystal Growth
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166 results at Journal of Crystal Growth
Growth studies of (Al,Ga,In)As on InP by molecular beam epitaxy
- J.P. Reithmaier
- S. Hausser
- et al.
- 1993
- Journal of Crystal Growth
Hydromagnetic flows and effects on Czochralski silicon crystals
- W.E. Langlois
- K.M. Kim
- et al.
- 1993
- Journal of Crystal Growth
Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP
- A. Catana
- R.F. Broom
- et al.
- 1993
- Journal of Crystal Growth
Structural analysis of as-deposited and annealed low-temperature gallium arsenide
- R.J. Matyi
- M.R. Melloch
- et al.
- 1993
- Journal of Crystal Growth
Observation of a novel form of ordering in Al0.5In0.5As and (Ga,Al)0.5In0.5As
- C.S. Baxter
- W.M. Stobbs
- et al.
- 1993
- Journal of Crystal Growth
Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures
- T.F. Kuech
- R.M. Potemski
- et al.
- 1992
- Journal of Crystal Growth
Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering
- D.W. Kisker
- G.B. Stephenson
- et al.
- 1992
- Journal of Crystal Growth
Simulation of carbon doping of GaAs during MOVPE
- Maurizio Masi
- Harsono Simka
- et al.
- 1992
- Journal of Crystal Growth
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- M.A. Tischler
- D.C. Latulipe
- et al.
- 1992
- Journal of Crystal Growth