Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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166 results at Journal of Crystal Growth

Atomic-scale view of AlGaAs/GaAs multilayers with cross-sectional scanning tunneling microscopy
- - M. Johnson
  - U. Maier
  - et al.
- 1993
- Journal of Crystal Growth
Growth studies of (Al,Ga,In)As on InP by molecular beam epitaxy
- - J.P. Reithmaier
  - S. Hausser
  - et al.
- 1993
- Journal of Crystal Growth
Hydromagnetic flows and effects on Czochralski silicon crystals
- - W.E. Langlois
  - K.M. Kim
  - et al.
- 1993
- Journal of Crystal Growth
Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP
- - A. Catana
  - R.F. Broom
  - et al.
- 1993
- Journal of Crystal Growth
Structural analysis of as-deposited and annealed low-temperature gallium arsenide
- - R.J. Matyi
  - M.R. Melloch
  - et al.
- 1993
- Journal of Crystal Growth
Observation of a novel form of ordering in Al_0.5In_0.5As and (Ga,Al)_0.5In_0.5As
- - C.S. Baxter
  - W.M. Stobbs
  - et al.
- 1993
- Journal of Crystal Growth
Growth behavior of (C₂H₅)₂GaCl and AsH₃ based GaAs: low reactor pressure and temperatures
- - T.F. Kuech
  - R.M. Potemski
  - et al.
- 1992
- Journal of Crystal Growth
Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering
- - D.W. Kisker
  - G.B. Stephenson
  - et al.
- 1992
- Journal of Crystal Growth
Simulation of carbon doping of GaAs during MOVPE
- - Maurizio Masi
  - Harsono Simka
  - et al.
- 1992
- Journal of Crystal Growth
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- - M.A. Tischler
  - D.C. Latulipe
  - et al.
- 1992
- Journal of Crystal Growth