Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition
- Martin M. Frank
- Glen D. Wilk
- et al.
- 2005
- Applied Physics Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.