Atomic layer deposition of materials for phase-change memories
- Markku Leskelä
- Viljami Pore
- et al.
- 2009
- ECS Meeting 2009
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10 results at ECS Meeting 2009
The effect of material and process interactions on BEOL integration
- T. Spooner
- J.C. Arnold
- et al.
- 2009
- ECS Meeting 2009
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Opportunities and challenges for germanium and silicon-germanium channel p-FETs
- S.W. Bedell
- N. Daval
- et al.
- 2009
- ECS Meeting 2009
Electrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
Engineering band-edge high-κ/metal gate n-MOSFETs with cap layers containing group IIA and IIIB elements by atomic layer deposition
- H. Jagannathan
- L.F. Edge
- et al.
- 2009
- ECS Meeting 2009
Three-dimensional atom-probe tomographic studies of nickel monosilicide/silicon interfaces on a subnanometer scale
- Praneet Adusumilli
- Conal E. Murray
- et al.
- 2009
- ECS Meeting 2009
The dielectric breakdown in gate oxides under high field stress
- S. Lombardo
- J.H. Stathis
- et al.
- 2009
- ECS Meeting 2009
Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling
- Sokrates T. Pantelides
- L. Tsetseris
- et al.
- 2009
- ECS Meeting 2009
Stress in electrodeposited high moment CoFe films
- I. Shao
- L. Romankiw
- et al.
- 2009
- ECS Meeting 2009