Evaluation of device damage from e-beam curing of ultra low-k BEOL dielectricsS. MehtaC. Dimitrakopouloset al.2005AMC 2005
Use of difunctional silylation agents for enhanced repair of post plasma damaged porous low k dielectricsS.V. NittaS. Purushothamanet al.2005AMC 2005
Damascene copper integration impact on electomigration and stress migrationAnthony K. StamperH. Bakset al.2005AMC 2005
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrulesS. LaneM. Fukasawaet al.2005AMC 2005
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devicesK. IdaS. Nguyenet al.2005AMC 2005
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applicationsMatthew AngyalJason Gillet al.2005AMC 2005