Back-gate controlled wide tunable range diode voltage in asymmetrical double-gate devicesKeunwoo KimChing-Te Chuanget al.2006IEEE SOI 2006
13GHz on-chip oscilloscope with sub-picosecond resolution using asynchronous clockJ. SchaubF. Gebaraet al.2006IEEE SOI 2006
Double-gate FET technology for RF applications: Device characteristics and low noise amplifier designKaran BhatiaKeunwoo Kimet al.2006IEEE SOI 2006
A low power and high performance SOI SRAM circuit design with improved cell stabilityR.V. JoshiY. Chanet al.2006IEEE SOI 2006