Study of boron penetration through thin oxide with p+-polysilicon gate
- J.Y.-C. Sun
- C.Y. Wong
- et al.
- 1989
- VLSI Technology 1989
Publications
Date
Featured collections
Popular topics
8 results at VLSI Technology 1989
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989
New technology for bipolar emitters in the deep sub-micron range
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1989
- VLSI Technology 1989
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
0.5 μm CMOS devices and circuits fabricated using synchrotron X-ray lithography
- L.K. Wang
- C.H. Hsu
- et al.
- 1989
- VLSI Technology 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
New preamorphization technique for very shallow p+-n junctions
- B. Davari
- E. Ganin
- et al.
- 1989
- VLSI Technology 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989