High-speed low-power charge-buffered active-pull-down ECL circuit
- C.T. Chuang
- Ken Chin
- 1990
- Bipolar Circuits and Technology Meeting 1990
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3 results at Bipolar Circuits and Technology Meeting 1990
A 1.9 ns/6.3 W/256 Kb bipolar SRAM design
- Kai-Yap Toh
- C.T. Chuang
- et al.
- 1990
- Bipolar Circuits and Technology Meeting 1990
A high-speed low-power JFET pull-down ECL circuit
- Hyun J. Shin
- P.F. Lu
- et al.
- 1990
- Bipolar Circuits and Technology Meeting 1990