HIGHLY LATCHUP-IMMUNE 1- mu m CMOS TECHNOLOGY FABRICATED WITH 1 Mev ION IMPLANTATION AND SELF-ALIGNED TiSi//2.
- F.S. Lai
- L.K. Wang
- et al.
- 1984
- IEDM 1984
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4 results at IEDM 1984
SPT CELL - A NEW SUBSTRATE - PLATE TRENCH CELL FOR DRAMS.
- N.C.-C. Lu
- P.E. Cottrell
- et al.
- 1984
- IEDM 1984
LPCVD IN-SITU ARSENIC DOPED POLYSILICON FOR VLSI APPLICATIONS.
- M. Arienzo
- A.C. Megdanis
- et al.
- 1984
- IEDM 1984
HOT CARRIER EFFECTS IN ADVANCED SELF-ALIGNED BIPOLAR TRANSISTORS.
- S.A. Petersen
- G.P. Li
- 1984
- IEDM 1984