SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T/fMAX through reduced Rb and Ccb parasiticsRenata Camillo-CastilloQ. Liuet al.2013BCTM 2013
A double balanced 81-86GHz EBAND active down conversion mixer in SiGe technologyBenny SheinmanRoi Carmonet al.2013BCTM 2013