Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs
- Sriramkumar Venugopalan
- Muhammed A. Kari
- et al.
- 2012
- SISPAD 2012
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4 results at SISPAD 2012
Investigation of the Impact of Random Dopant Fluctuation on Static Noise Margin of 22nm SRAM
- Sarah Q. Xu
- Kai Xiu
- et al.
- 2012
- SISPAD 2012
Simulation of phonon-induced mobility under arbitrary stress, wafer and channel orientations and its application to FinFET technology
- Kai Xiu
- Phil Oldiges
- 2012
- SISPAD 2012
A Simple, unified 3D stress model for device design in stress-enhanced mobility technologies
- Arvind Kumar
- Kai Xiu
- et al.
- 2012
- SISPAD 2012