Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
Publications
Date
Featured collections
Popular topics
3 results at ISTDM 2012
Effect of germanium concentration on the dielectric function of strained Si 1-xGe x films
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2012
- ISTDM 2012
Demonstration of electroluminescence from strained Ge membrane LED
- Donguk Nam
- David Sukhdeo
- et al.
- 2012
- ISTDM 2012