A simulation-based study of sensitivity to parameter fluctuations of silicon tunnel FETsKathy BoucartAdrian M. Ionescuet al.2010ESSDERC 2010
Experimental evidence of unconventional room-temperature Quantum Hall effect (RTQHE) in 65nm Si nMOSFETs at very low magnetic fieldsEdmundo A. Gutierrez-DFernando Guarin2010ESSDERC 2010