Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy
- J. Nowak
- R.P. Robertazzi
- et al.
- 2011
- IEEE Magnetics Letters
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9 results at IEEE Magnetics Letters
Settling Time of Current-Tunable Probabilistic Bit's Distribution
- Brooke Chelsea McGoldrick
- Jonathan Z. Sun
- 2022
- IEEE Magnetics Letters
Reliable 5 ns writing of spin-transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2019
- IEEE Magnetics Letters
Low-Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons
- Orchi Hassan
- Rafatul Faria
- et al.
- 2019
- IEEE Magnetics Letters
Theory of Spin Torque Switching Current for the Double Magnetic Tunnel Junction
- 2017
- IEEE Magnetics Letters
Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
- J. J. Nowak
- Raphael P. Robertazzi
- et al.
- 2016
- IEEE Magnetics Letters
Perpendicular Magnetic Anisotropy and Easy Cone State in Ta/Co60Fe20B20/MgO
- Justin M. Shaw
- Hans T. Nembach
- et al.
- 2015
- IEEE Magnetics Letters
Optimization of tunneling magnetoresistance in perpendicular magnetic tunnel junctions with CO\Pd reference layers
- G. Hu
- Teya Topuria
- et al.
- 2013
- IEEE Magnetics Letters
Impact of TA diffusion on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO
- Naruto Miyakawa
- D.C. Worledge
- et al.
- 2013
- IEEE Magnetics Letters