Direct SIMS determination of the InxGa1-xN mole fraction
- A.P. Kovarsky
- Yu.L. Kretser
- et al.
- 1998
- MRS Internet Journal of Nitride Semiconductor Research
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4 results at MRS Internet Journal of Nitride Semiconductor Research
Properties of InGaN deposited on glass at low temperature
- Tilman Beierlein
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
- A. Pelzmann
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
- S. Strite
- A. Pelzmann
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research