The DX centre
T.N. Morgan
Semiconductor Science and Technology
We have studied the 1/f noise in underdoped YBa2Cu3O7-δ (YBCO). The YBCO material being studied is the conducting layer in a three-terminal gated device. In sufficiently underdoped devices, the carriers are localized and the main transport mechanism is variable range hopping. In this regime, the normalized power spectrum S1/I2 is observed to be linearly proportional to the device resistance R. This scaling is observed as we change R by changing the temperature of the device, the amount of oxygen doping, or the gate voltage. The observed noise is interpreted as being the result of the motion of oxygen atoms in the CuOx (basal) planes of the YBCO.
T.N. Morgan
Semiconductor Science and Technology
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Imran Nasim, Melanie Weber
SCML 2024
Ellen J. Yoffa, David Adler
Physical Review B