Scott K. Reynolds, Brian A. Floyd, et al.
Proceedings of the IEEE
Conference paper
96 GHz static frequency divider in SiGe bipolar technology
Abstract
We report a static frequency divider designed in a 210 GHz fT, 0.13 μm SiGe bipolar technology. The circuit consumes about 44 mA per latch (140 mA total for the chip, with input-output stages) from a -5.5 V power supply and operates up to 96.6 GHz.
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Alexander Rylyakov, Thomas Zwick
IEEE Journal of Solid-State Circuits
Ullrich R. Pfeiffer, Arun Chandrasekhar, et al.
IEEE-SPI 2004
Conference paper
A 136-GHz dynamic divider in SiGe technology
Ekaterina Laskin, Alexander Rylyakov
SiRF 2009