A 108Gb/s 4:1 multiplexer in 0.13μm SiGe-bipolar technology

Abstract

A 4:1 multiplexer implemented in a 210GHz f T 0.13μm SiGe-bipolar technology and operating beyond 100Gb/s is reported. Control of on-chip clock distribution is critical to achieve such data rate. The chip consumes 1.45W from a -3.3V supply and exhibits less than 340fs rms jitter on the output data.