Linda M. Geppert, David F. Heidel, et al.
IEEE Journal of Solid-State Circuits
A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12-GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBe/Hz is achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.
Linda M. Geppert, David F. Heidel, et al.
IEEE Journal of Solid-State Circuits
Joachim N. Burghartz
International Journal of RF and Microwave Computer-Aided Engineering
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE Transactions on Electron Devices
Tony Tae-Hyoung Kim, Pong-Fei Lu, et al.
IEEE Transactions on VLSI Systems