Progress in RF inductors on silicon - understanding substrate losses
- J.N. Burghartz
- 1998
- IEDM 1998
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67 results for J.N. Burghartz
RF circuit design aspects of spiral inductors on silicon
- J.N. Burghartz
- D. Edelstein
- et al.
- 1998
- ISSCC 1998
Novel substrate contact structure for high-Q silicon-integrated spiral inductors
- J.N. Burghartz
- A.E. Ruehli
- et al.
- 1997
- IEDM 1997
4 b 8 Gsample/s A/D converter in SiGe bipolar technology
- Peter Xiao
- Keith A. Jenkins
- et al.
- 1997
- ISSCC 1997
Monolithic Spiral Inductors Fabricated Using a VLSI Cu-Damascene Interconnect Technology and Low-Loss Substrates
- J.N. Burghartz
- D. Edelstein
- et al.
- 1996
- IEDM 1996
3V 4GHz nMOS voltage-controlled oscillator with integrated resonator
- M. Soyuer
- Keith A. Jenkins
- et al.
- 1996
- ISSCC 1996
High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier
- J.N. Burghartz
- M. Soyuer
- et al.
- 1995
- IEDM 1995
Submicron CMOS Gate Electrode Discontinuity: Electrical Signature and Effect on Circuit Speed
- Keith A. Jenkins
- J.N. Burghartz
- et al.
- 1993
- IEDM 1993
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991