Scripta Metallurgica

Paper

01 Jan 1972

A mechanism for dislocation multiplication at precipitates or inclusions in crystals

View publication

Abstract

No abstract available.

Paper

Ion-implanted polysilicon diffusion sources

Alwin E. Michel, R.H. Kastl, et al.

Nuclear Instruments and Methods In Physics Research

Conference paper

Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing

G. Shahidi, B. Davari, et al.

IEDM 1990

Paper

Accommodation of misfit across the interface between crystals of semiconducting elements or compounds

J.W. Matthews, S. Mader, et al.

Journal of Applied Physics

Paper

Reply to comments on "dislocations in gadolinium gallium garnet (Gd₃Ga₅O₁₂) I. Dislocations at inclusions"

J.W. Matthews, E. Klokholm, et al.

Scripta Metallurgica

View all publications