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PaperThe interpretation of dislocation contrast in x-ray topographs of GaAs 1-x PxS. Mader, A.E. Blakeslee, et al.Journal of Applied Physics
PaperDefects in epitaxial multilayers: I. Misfit dislocationsJ.W. Matthews, A.E. BlakesleeJournal of Crystal Growth
Conference paperSHORT TIME ANNEALING OF As AND B ION IMPLANTED Si USING TUNGSTEN-HALOGEN LAMPS.T.O. Sedgwick, R. Kalish, et al.MRS Proceedings 1983
