PaperAccommodation of misfit across the interface between crystals of semiconducting elements or compoundsJ.W. Matthews, S. Mader, et al.Journal of Applied Physics
PaperTransient enhanced diffusion in arsenic-implanted short time annealed siliconR. Kalish, T.O. Sedgwick, et al.Applied Physics Letters
PaperImperfect misfit dislocations in thin films of silver on palladiumJ.W. MatthewsJournal of Applied Physics
Conference paperSHORT TIME ANNEALING OF As AND B ION IMPLANTED Si USING TUNGSTEN-HALOGEN LAMPS.T.O. Sedgwick, R. Kalish, et al.MRS Proceedings 1983
