Accommodation of misfit across the interface between crystals of semiconducting elements or compounds
- J.W. Matthews
- S. Mader
- et al.
- 2003
- Journal of Applied Physics
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28 results for S. Mader
Extended dislocations in GaAs0.7P0.3
- S. Mader
- A.E. Blakeslee
- 2003
- Applied Physics Letters
The interpretation of dislocation contrast in x-ray topographs of GaAs 1-x Px
- S. Mader
- A.E. Blakeslee
- et al.
- 2003
- Journal of Applied Physics
Effects of a stress field on boron ion implantation damage in silicon
- J.D. Mis
- S. Mader
- et al.
- 1993
- Journal of Applied Physics
Identification Of Perimeter Depletion And Emitter Plug Effects In Deep-Submicrometer, Shallow-Junction Polysilicon Emitter Bipolar Transistors
- Joachim N. Burghartz
- Jack Yuan-Chen Sun
- et al.
- 1992
- IEEE T-ED
Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- Siegfried R. Mader
- et al.
- 1991
- IEEE T-ED
Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors
- Joachim N. Burghartz
- Jack Y.-C. Sun
- et al.
- 1990
- VLSI Technology 1990
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters