A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We studied the Cu 2p x-ray absorption spectra of the superconductor La2-xSrxCuO4 in the doping regime x=0-0.6 and found that the intensity of the satellite peak is a reliable measure of the doping-induced hole concentration. From the Cu 2p absorption spectra taken in this work on the La2-xSrxCuO4 system and from those published for other high-temperature superconductors, we found that the energy separation between the satellite peak and the main peak, which is the ligand-hole energy, increases with Tc. © 1991.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
B. Rajendran, M.H. Lee, et al.
VLSI Technology 2008
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry