The impact of gate-oxide breakdown SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- IEEE Electron Device Letters
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42 results for S.P. Kowalczyk
Impact of SOI history effect on random data signals
- Keith A. Jenkins
- S. Kim
- et al.
- 2007
- ICICDT 2007
A sub-600mV, fluctuation tolerant 65nm CMOS SRAM array with dynamic cell biasing
- Azeez Bhavnagarwala
- Stephen Kosonocky
- et al.
- 2007
- VLSI Circuits 2007
A transregional CMOS SRAM with single, logic V DD and dynamic power rails
- Azeez J. Bhavnagarwala
- Stephen V. Kosonocky
- et al.
- 2004
- VLSI Circuits 2004
High performance SRAMs in 1.5 V, 0.18μm partially depleted SOI technology
- R.V. Joshi
- A. Pellela
- et al.
- 2002
- VLSI Circuits 2002
Analysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
2 GHz cycle, 430 ps access time 34 Kb L1 directory SRAM in 1.5 V, 0.18 μm CMOS bulk technology
- R.V. Joshi
- S.P. Kowalczyk
- et al.
- 2000
- VLSI Circuits 2000
Low temperature selective area chemical vapor deposition of gold films: Growth and characterization
- P.F. Seidler
- S.P. Kowalczyk
- et al.
- 1992
- MRS Proceedings 1992
Surface modification of low CTE polyimide
- K.-W. Lee
- S.P. Kowalczyk
- et al.
- 1991
- ANTEC Annual Technical Conference 1991
Polyimide surface chemistry
- K.-W. Lee
- S.P. Kowalczyk
- et al.
- 1989
- ACS PMSE 1989