A sub-600-mV, fluctuation tolerant 65-nm CMOS SRAM array with dynamic cell biasing
- Azeez J. Bhavnagarwala
- Stephen Kosonocky
- et al.
- 2008
- IEEE Journal of Solid-State Circuits
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42 results for S.P. Kowalczyk
Impact of SOI history effect on random data signals
- Keith A. Jenkins
- S. Kim
- et al.
- 2007
- ICICDT 2007
A sub-600mV, fluctuation tolerant 65nm CMOS SRAM array with dynamic cell biasing
- Azeez Bhavnagarwala
- Stephen Kosonocky
- et al.
- 2007
- VLSI Circuits 2007
A transregional CMOS SRAM with single, logic V DD and dynamic power rails
- Azeez J. Bhavnagarwala
- Stephen V. Kosonocky
- et al.
- 2004
- VLSI Circuits 2004
High performance SRAMs in 1.5 V, 0.18μm partially depleted SOI technology
- R.V. Joshi
- A. Pellela
- et al.
- 2002
- VLSI Circuits 2002
The impact of gate-oxide breakdown SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- IEEE Electron Device Letters
Formation of Polyimide/Substrate Interfaces: Investigation of Interfacial Chemistry of Polyamic Acid with Surfaces of Silicon, Copper, and Chromium
- Steven P. Kowalczyk
- Jean L. Jordan-Sweet
- 2002
- Chemistry of Materials
Surface Modification of BPDA-PDA Polyimide
- Kang-Wook Lee
- Steven P. Kowalczyk
- et al.
- 2002
- Langmuir
Surface Modification of Pmda-Oda Polyimide: Surface Structure-Adhesion Relationship
- Kang-Wook Lee
- Steven P. Kowalczyk
- et al.
- 2002
- Macromolecules
Analysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability