A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported. © 2008 Elsevier Ltd. All rights reserved.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials