Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported. © 2008 Elsevier Ltd. All rights reserved.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
R. Ghez, J.S. Lew
Journal of Crystal Growth
Frank Stem
C R C Critical Reviews in Solid State Sciences