A perspective on future nanoelectronic devices

Abstract

One clear direction for the development of future nanoelectronic devices is low power and high performance at low operating voltage. The fact that CMOS has a subthreshold region and a linear region, and that CMOS circuits operate at Vdd a few times Vt suggest that it is a challenge to reduce CMOS voltage towards 0.5 V. However, there is evidence that SOI lateral bipolar could be a low-power and high-performance technology. SOI lateral bipolar devices using small-gap semiconductors offer a clear path for high performance and low power bipolar circuits at about 0.5 V. © 2013 IEEE.