Pong-Fei Lu, James H. Comfort, et al.
IEEE Electron Device Letters
Ring-oscillator-based test structures that can separately measure the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) degradation effects in digital circuits are presented for high-k metal gate devices. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including frequency degradation sensing circuitry have been implemented in an experimental high-k/metal gate SoI process.
Pong-Fei Lu, James H. Comfort, et al.
IEEE Electron Device Letters
Keith A. Jenkins, Walter H. Henkels
IEEE Journal of Solid-State Circuits
Pong-Fei Lu, Tze-Chiang Chen
IEEE T-ED
Eric J. Fluhr, Steve Baumgartner, et al.
IEEE JSSC