True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
By means of "hybrid" Si molecular beam epitaxy (MBE), an n-type Si contact layer for an electroluminescent (EL) p-i-n diode was successfully regrown on a Si1-xGex/Si single quantum well (SQW) layer. The starting undoped SQW layer was grown by gas-source MBE (GSMBE) using disilane (Si2H6) and germane (GeH4), and the n-Si contact layer was regrown by using solid-source MBE after transferring the sample through the air. A (2×1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. Evidence of the excellent quality of the EL p-i-n device was provided by the sharpest emission lines, ≈ 5.5 meV, ever reported in the EL spectra of an SiGe system. © 1994.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Ronald Troutman
Synthetic Metals
H.D. Dulman, R.H. Pantell, et al.
Physical Review B