A Si1-xGex/Si single quantum well p-i-n structure grown by solid-source and gas source "hybrid" Si molecular beam epitaxyY. KatoS. Fukatsuet al.1994Journal of Crystal Growth
Hybrid Si molecular beam epitaxial regrowth for a strained Si 1-xGex/Si single-quantum-well electroluminescent deviceY. KatoS. Fukatsuet al.1993Applied Physics Letters
Quantum size effect of excitonic band-edge luminescence in strained si1-xgex/si single quantum well structures grown by gas-source si molecular beam epitaxySusumu FukatsuHironobu Yoshidaet al.1992Japanese Journal of Applied Physics