Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Madelung potentials, assuming the normal oxidation states of the ions involved, have been calculated within the point-charge approximation for most of the common metal oxides, and an empirical expression has been found for obtaining these potentials to a high degree of accuracy. Using these potentials and core binding-energy shifts of the free ions [1], calculated and experimental ESCA spectra have been compared. Deficiencies of the simple Madelung-potential model are discussed, and trends in the ionicity of the oxides are obtained. © 1980.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.W. Gammon, E. Courtens, et al.
Physical Review B
A. Reisman, M. Berkenblit, et al.
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007