T.W. Hickmott, P. Solomon, et al.
Physical Review Letters
Both measurements of capacitance-voltage (C-V) curves of n- GaAs-undoped AlxGa1- xAs- n+ GaAs (AlGaAs) capacitors at different temperatures, and calculations of C-V curves of semiconductor-insulator-semiconductor (SIS) capacitors at different temperatures, show that there is a temperature-invariant capacitance C C and voltage VC at which C-V curves at different temperatures intersect. We show that this is a general property of SIS capacitors having a degenerate gate and nondegenerate substrate of the same doping type, and that qVC, where q is the electron charge, is approximately equal to the Fermi energy of the degenerate GaAs gate. V C provides a good estimate for the voltage required to establish an accumulation layer on n- GaAs at low temperatures, which is determined from magnetotunneling measurements on AlGaAs capacitors.
T.W. Hickmott, P. Solomon, et al.
Physical Review Letters
D.J. Frank, P. Solomon
ISLPED 1995
T.W. Hickmott
Vacuum
N. Klein, P. Solomon
Journal of Applied Physics