Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Diodes are fabricated from aluminum‐doped Czochralski‐grown silicon, are electron irradiated at room temperature, and are studied using the DLTS technique. The divacancy, the carbon interstitial, and the carbon–oxygen–vacancy complex, all previously observed in boron‐doped Cz silicon, are observed as well as several defects unique to aluminum‐doped silicon. The results are quite different from those reported for aluminum‐doped float zone silicon, however. Copyright © 1980 WILEY‐VCH Verlag GmbH & Co. KGaA
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
T.N. Morgan
Semiconductor Science and Technology
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering