EPR Observation of an Au‐Fe Complex in Silicon: I. Experimental Data
- R.L. Kleinhenz
- Y.H. Lee
- et al.
- 2006
- physica status solidi (b)
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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12 results for J.W. Corbett
Reactive ion etching of SiGe alloys using CF2Cl2
- Ying Zhang
- Gottlieb S. Oehrlein
- et al.
- 1992
- Journal of Applied Physics
Selective dry etching of silicon with respect to germanium
- G.S. Oehrlein
- T.D. Bestwick
- et al.
- 1990
- Applied Physics Letters
Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior
- T.D. Bestwick
- G.S. Oehrlein
- et al.
- 1989
- Applied Physics Letters
Effects of deuterium plasmas on silicon near-surface properties
- J.L. Lindström
- G.S. Oehrlein
- et al.
- 1989
- Journal of Applied Physics
A study of the annealing of the 830 cm−1 IR band observed in electron‐irradiated silicon
- J.L. Lindsteöm
- G.S. Oehrlejm
- et al.
- 1986
- physica status solidi (a)
On the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon
- J.L. Lindstrom
- B.C. Svensson
- et al.
- 1984
- physica status solidi (a)
Models for the Hydrogen‐Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon
- T.S. Shi
- S.N. Sahu
- et al.
- 1982
- physica status solidi (a)
Ion-induced defects in semiconductors
- James W. Corbett
- James P. Karins
- et al.
- 1981
- Nuclear Instruments and Methods
A transient capacitance study of radiation‐induced defects in aluminum‐doped silicon
- Y.H. Lee
- K.L. Wang
- et al.
- 1980
- physica status solidi (a)