Salvatore Rotolo, Alberto Tanzi, et al.
Journal of Lightwave Technology
Quantum-Well (A1)GaInP stripe lasers with lateral current and carrier confinement have been fabricated making use of the disordering of the natural superlattice at sidewalls with shallow angles during epitaxial growth on (001) GaAs substrates patterned with ridges and trenches. Excellent device quality is obtained if the substrates are patterned with ridges. With a stripe width of 5 μm required for fundamental transversal mode operation, the threshold current density of these devices is one-half that of conventional planar stripe lasers owing to improved current confinement. © 1993 IEEE
Salvatore Rotolo, Alberto Tanzi, et al.
Journal of Lightwave Technology
Nicholas I. Buchan, Robert M. Potemski, et al.
Journal of Chemical and Engineering Data
Peter Unger, Gian-Luca Bona, et al.
IEEE Journal of Quantum Electronics
Roger F. Dangel, Bert J. Offrein, et al.
SPIE Photonics Fabrication Europe 2002