Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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14 results for N.I. Buchan

Epitaxial Growth of GaAs with (C₂H₅)₂GaCl and AsH₃ in a Hotwall Reactor
- - T.F. Kuech
  - M.A. Tischler
  - et al.
- 2019
- JES
Vapor Pressure and Vapor Composition of Diethylgallium Chloride and Diethylaluminum Chloride
- - Nicholas I. Buchan
  - Robert M. Potemski
  - et al.
- 2002
- Journal of Chemical and Engineering Data
The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE
- - T. Kobayashi
  - H. Kojima
  - et al.
- 1995
- Journal of Physics and Chemistry of Solids
β-Hydride elimination reaction of triethylgallium on GaAs(100) surfaces
- - Nicholas I. Buchan
  - Ming L. Yu
- 1993
- Surface Science
Lateral down-scaling of selective area MOVPE-grown GaInAs/InP wires and dots
- - H. Rothuizen
  - P. Roentgen
  - et al.
- 1993
- Microelectronic Engineering
(A1)GaInP Laser with Lateral Confinement by Epitaxial Growth on Nonplanar Substrates
- - Gian-Luca Bona
  - Peter Unger
  - et al.
- 1993
- IEEE Photonics Technology Letters
Compositional variation and ordering of Ga_xIn_1-xP on GaAs structured substrates
- - N.I. Buchan
  - A. Jakubowicz
  - et al.
- 1992
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- - T.J. De Lyon
  - N.I. Buchan
  - et al.
- 1991
- Applied Physics Letters
Use of CCl₄ and CHCl₃ in gas source molecular beam epitaxy for carbon doping of GaAs and Ga_xIn_1-xP
- - T.J. de Lyon
  - N.I. Buchan
  - et al.
- 1991
- Journal of Crystal Growth
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CH_yX_{4 - y}, TMG and AsH₃
- - N.I. Buchan
  - T.F. Kuech
  - et al.
- 1991
- Journal of Crystal Growth