D.A. Smith, M.F. Chisholm, et al.
Applied Physics Letters
Zone-melt recrystallization (ZMR) of polycrystalline silicon-on-insulator films has been used to produce a variety of tilt grain boundaries for electrical characterization. Electron channeling patterns reveal the grains to have misorientations up to ∼25°and the parallel boundaries to be separated by distances of up to ∼1 mm. Current-voltage measurements indicate that the boundaries are electrically inactive, with no evidence of defect gap states even after long high-temperature anneals.
D.A. Smith, M.F. Chisholm, et al.
Applied Physics Letters
A.A. Levi, D.A. Smith, et al.
Journal of Applied Physics
V. Vitek, D.A. Smith, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
P.V. Evans, G. Devaud, et al.
Acta Metallurgica Et Materialia